Figure 1
APS/Alan Stonebraker

Figure 1: Different methods for creating and detecting the spin polarization of holes in p-type silicon. (Top left) Electrical injection by spin-polarized tunneling. (Top right) Thermal injection by a process called Seebeck spin tunneling. (Bottom) The approach used by Shikoh et al. [4], namely, dynamic injection by spin pumping and detection with a separate palladium (Pd) contact.