Browse Physics
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New experiments indicate that the intrinsic regime of the anomalous Hall effect is independent of scattering.
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A dual spin valve with antiparallel outer layers is used to demonstrate a new form of current-dependent giant magnetoresistance.
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The effects of torques caused by spin-polarized currents are often unwanted in magnetic nanostructures, but they can be diminished with the right design.
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The efficient injection of polarized spins from magnetic materials into semiconductors, a prerequisite for spintronics applications, is a formidable challenge. With ferromagnetic Co2FeSi it is now possible to achieve a spin injection efficiency of close to 50%.
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