Browse Physics
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A newly discovered type of magnetoresistance, resulting from spin-dependent scattering at a metal-magnet interface, may potentially be used to study the magnetization in insulating magnets or to develop new spintronic devices.
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Ferroelectric domain patterns enable voltage-induced magnetization reversal in a magnetic alloy.
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Thermal magnetic fluctuations, usually thought of as a barrier to magnetic information storage and processing, can be harnessed to make green, low-energy magnetic applications a possibility.
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